AP6H06S
Description
The AP6H06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
Key Features
- VDS = 60V ID =6 A
- Part: AP6H06S
- Description: 60V N+N-Channel Enhancement Mode MOSFET
- Category: MOSFET
- Manufacturer: APM
- Size: 1.21 MB