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AP6H06S - 60V N+N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP6H06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 60V ID =6 A RDS(ON) < 35mΩ @ VGS=10V.

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Datasheet preview – AP6H06S

Datasheet Details

Part number AP6H06S
Manufacturer APM
File Size 1.21 MB
Description 60V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP6H06S Datasheet
Additional preview pages of the AP6H06S datasheet.

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AP6H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP6H06S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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