AP70N03NF Datasheet | APM

Description 30V N-Channel Enhancement Mode MOSFET The AP70N03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =70A RDS(ON) < 5.5mΩ @ VGS=10V Only Application Battery protection Use Load switch Uninterruptible power supply times Package Marking and Ordering Information g Product ID Pack en AP70N03NF PDFN5- 6-8L Marking AP70N03NF XXX YYYY sh Absolute Maximum Ratings (TC=25℃unless otherwise noted) g Symbol Parameter n VDS Drain-Source Voltage To VGS Gate-Source Voltage Qty(PCS) 5000 Rating 30 ±20 ID@TC=25℃ r ID@TC=100℃ Fo ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 70 51 15 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 160 115.2 Avalanche Current PD@TC=25℃ Total Power Dissipation4 PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature...