DESCRIPTION
AP70N03NF 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =70A RDS(ON) < 5.5mΩ @ VGS=10V Only Application Battery protection Use Load switch Uninterruptible power supply times Package Marking and Ordering Information g Product ID Pack en AP70N03NF PDFN5*6-8L Marking AP70N03NF XXX YYYY sh ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) g Symbol Parameter n VDS Drain-Source Voltage To VGS Gate-Source Voltage Qty(PCS) 5000 Rating 30 ±20 ID@TC=25℃ r ID@TC=100℃ FoID@TA=25℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 70 51 15 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 12 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 160 115.2 IAS Avalanche Current 48 PD@TC=25℃ Total Power Dissipation4 59 PD@TA=25℃ Total Power Dissipation4 2 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62 RθJC Th...
APM
