AP7P03MI Overview
The AP7P03MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Part number | AP7P03MI |
|---|---|
| Datasheet | AP7P03MI-APM.pdf |
| File Size | 559.04 KB |
| Manufacturer | APM |
| Description | -30V P-Channel Enhancement Mode MOSFET |
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The AP7P03MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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