AP7P03MI Datasheet PDF - APM -30V P-Channel Enhancement Mode MOSFET Specs

AP7P03MI - -30V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP7P03MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS = -30V ID =7.0A RDS(ON).

Datasheet Details

Part number	AP7P03MI
Manufacturer	APM
File Size	559.04 KB
Description	-30V P-Channel Enhancement Mode MOSFET
Datasheet	AP7P03MI Datasheet
Additional preview pages of the AP7P03MI datasheet.

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Full PDF Text Transcription

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AP7P03MI -30V P-Channel Enhancement Mode MOSFET Description The AP7P03MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =7.0A RDS(ON) <32mΩ @ VGS=10V （Type：26mΩ） Application Boost driver Brushless motor Package Marking and Ordering Information Product ID Pack AP7P03MI SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ -4.5V1 ID@TC=70℃ Continuous Drain Current, VGS @ -4.

Published: Mar 4, 2025 |