AP80N06HP - 60V N-Channel Enhancement Mode MOSFET

APM

General Description

to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V.

or in other Switching application.

Key Features

VDS = 60V ID =80A RDS(ON) < 8.5mΩ @ VGS=10V （Type：7.5mΩ）.

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AP80N06HP 60v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP80N06HP
Manufacturer	APM
File Size	771.84 KB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	AP80N06HP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP80N06HPIT 60V N-Channel Enhancement Mode MOSFET The AP80N06HP/T uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =80A RDS(ON) < 8.5mΩ @ VGS=10V （Type：7.