AP85N04NF Datasheet | APM

Description 40V N-Channel Enhancement Mode MOSFET The AP85N04NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =100 A RDS(ON) < 6.5mΩ @ VGS=10V Application Only Battery protection Load switch Uninterruptible power supply Use times Package Marking and Ordering Information Product ID Pack Marking ng AP85N04NF PDFN5- 6-8L AP85N04NF XXX YYYY he Absolute Maximum Ratings (TC=25℃unless otherwise noted) s Symbol Parameter g VDS Drain-Source Voltage Ton VGS Gate-Source Voltage Qty(PCS) 5000 Rating 40 ±20 ID@TC=25℃ r ID@TC=100℃ Fo IDM Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 85 58 150 Single Pulse Avalanche Energy3 Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to...