DESCRIPTION
40V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 40V ID =100 A RDS(ON) < 6.5mΩ @ VGS=10V Application Only Battery protection Load switch Uninterruptible power supply Use times Package Marking and Ordering Information Product ID Pack Marking ng AP85N04NF PDFN5*6-8L AP85N04NF XXX YYYY he ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) s Symbol Parameter g VDS Drain-Source Voltage Ton VGS Gate-Source Voltage Qty(PCS) 5000 Rating 40 ±20 ID@TC=25℃ r ID@TC=100℃ FoIDM Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 85 58 150 EAS Single Pulse Avalanche Energy3 110.5 IAS Avalanche Current 47 PD@TC=25℃ Total Power Dissipation4 52.1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62 RθJC Thermal Resistance Junction-Case1 2.4 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 AP85N04NF Rve1.0 臺灣永源微電子科技有限公司 sales.Mr.wang13826508770 AP85N04NF 40V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min.
APM
