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AP8805DF - 20V N+N-Channel Enhancement Mode MOSFET

General Description

The AP8805DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =52A RDS(ON) < 6.0mΩ @ VGS=4.5V （Type：4.8mΩ）.

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Datasheet Details

Part number AP8805DF
Manufacturer APM
File Size 810.85 KB
Description 20V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP8805DF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP8805DF 20V N+N-Channel Enhancement Mode MOSFET Description The AP8805DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =52A RDS(ON) < 6.0mΩ @ VGS=4.5V （Type：4.8mΩ） Application 3.3V MCU Drive Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP8805DF DFN3*3-8L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.