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AP8805DF Datasheet PDF

APM AP8805DF

The AP8805DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP8805DF
Datasheet AP8805DF Download
Manufacturer
APM
Description 20V N+N-Channel Enhancement Mode MOSFET
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AP8805DF datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = 20V ID =52A RDS(ON) < 6.0mΩ @ VGS=4.5V (Type:4.8mΩ) Application 3.3V MCU Drive Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP8805DF DFN3*3-8L

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Power Dissipation Operating and Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case Marking AP8805DF XXX YYYY Qty(PCS) 5000 Max. 20 ±12 52 30 120 147.6 37 -55 to +175 85 2 Units V V A A A mJ W ℃ ℃/W ℃/W 1 AP8805DF REV1.0 永源微電子科技有限公司 AP8805DF 20V N+N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit V(BR)DSS I...
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