DESCRIPTION
AP90N03NF 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS=30V ID =90A RDS(ON) < 6.5mΩ @ VGS=10V （Type：4.8mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP90N03NF PDFN5X6-8L Marking AP90N03NF XXXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=75℃ IDM EAS Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 30 ±20 90 50 240 56 15 46 -55 to 175 -55 to 175 25 2.72 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP90N03NF RVE1.0 永源微電子科技有限公司 1 AP90N03NF 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
