DESCRIPTION
AP90N08NF 85V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 85V ID =95A RDS(ON) < 5.2mΩ VGS=10V (Type：4.5mΩ) Only Application Battery protection Use Load switch Uninterruptible power supply times Package Marking and Ordering Information Product ID Pack Marking ng AP90N08NF PDFN5*6-8L AP90N08NF XXX YYYY he ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) s Symbol ng VDS To VGS Parameter Drain-Source Voltage Gate-Source Voltage Rating 85 ±20 ID@TC=25℃ r ID@TC=100℃ FoIDM Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 95 75 480 EAS Single Pulse Avalanche Energy 560 IAS Avalanche Current 43.4 PD@TC=25℃ Total Power Dissipation4 180 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient 0.70 RθJC Thermal Resistance Junction-Case 62 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W 1 AP90N08NF RVE1.0 永源微電子科技有限公司 sales.Mr.wang13826508770 AP90N...
APM
