DESCRIPTION
APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency GENERAL FEATURES
VDS = 800V） IDM =36A RDS(ON) < 500mΩ @ VGS=10V （Type：400mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking APJ28N80D TO-252-3L APJ28N80D XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) 800 ID Continuous Drain Current 9 IDM Pulsed Drain Current (note1) 28 VGS Gate-Source Voltage ±30 EAS PD TJ, Tstg Single Pulse Avalanche Energy (note2) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range 270 52 -55~+150 RthJC Thermal Resistance, Junction-to-Case 2.4 RthJA Thermal Resistance, Junction-to-Ambient 62.5 Qty(PCS) 2500 Unit V A A V mJ W ºC ºC/W ºC/W APJ28N80D REV1.0 永源微電子科技有限公司 1 APJ28N80D 800V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, un...
APM
