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APM4953 - Dual P-Channel MOSFET

General Description

Operation Junction Temp.

Date Code Absolute Maximum Ratings (TA=25 unless otherwise noted) Symbol Parameter VDSS VGSS ID IDM D

Key Features

  • -30V/-4.9A, RDS(on)=53mΩ(typ. )@VGS=-10V RDS(on)=53mΩ(typ. )@VGS=-4.5V Supper High Density Cell Design Reliable and Rugged SO-8 Package Pin.

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Datasheet Details

Part number APM4953
Manufacturer ART CHIP
File Size 491.29 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet APM4953 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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APM4953 Dual P-Channel Enhancement Mode Mosfet Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Features -30V/-4.9A, RDS(on)=53mΩ(typ.)@VGS=-10V RDS(on)=53mΩ(typ.)@VGS=-4.5V Supper High Density Cell Design Reliable and Rugged SO-8 Package Pin Description SO-8 P-Channel Mosfet Ordering and Marking Information APM4953K: Package Code K: SO-8 Operation Junction Temp. Range C:-55 to 150 Handling Code TU: Tube TR: Tape & Reel XXXXX – Date Code Absolute Maximum Ratings (TA=25 unless otherwise noted) Symbol Parameter VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Thermal Resistance – Junction to Ambient * Surface Mounted on FR4 Board, t ≤10 sec. Absolute Maximum Ratings (Cont.