ART CHIP IRF634A
Advanced Power MOSFET
| Part No. | IRF634A |
|---|---|
| Datasheet | IRF634A Download |
| Manufacturer |  ART CHIP |
| Description | Advanced Power MOSFET |
| Buy | Stock & Price |
FEATURES
z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current:10µA (Max.)@VDS=250V z Lower RDS(ON): 0.327 Ω(Typ.) IRF634A Advanced Power MOSFET BVDSS=250V RDS(on)=0.45Ω ID=8.1A TO-220 1. Gate 2. Drain 3.SourceABSOLUTE MAXIMUM RATINGS
Symbol Characteristic VDSS ID Drain-to-Source Voltage Continuous Drain Current (Tc=25 ) Continuous Drain Current (Tc=100 ) IDM VGS EAS IAR EAR dv/dt Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) PD Total Power Dissipation (Tc=25 ) Linear Derating Factor TJ, TSTG Operating Junction and Storage Temperature Range TL Maximum Lead Temp. for Soldering Purposes, 1/8. from case for 5-seconds Value 250 8.1 5.1 32 ±30 205 8.1 7.4 4.8 74 0.59 -55 to +150 300 Thermal Resistance Symbol characteristic RӨJC RӨCS RӨJA Junction-to-Case C
