IRF712 Datasheet | ART CHIP

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-220AB IRF711 IRF712 IRF713 MTP2N35 MTP2N40 Maximum Ratings Symbol VDSS VDGR VGS TJ,Tsgt TL Characteristic Drain to Source Voltage1 Drain to Gate Voltage1 RGS=20k Ω Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5 s Rating IRF710/712 MTP2N40 400 400 ±20 -55 to +150 Maximum On-State Characteristics RDS(on) ID Static Drain-to-Source On Resistance Drain Current Continuous at Tc=25- Continuous at Tc=100- Pulsed IRF710-711 3.6 1.5 1.0 6.0 Maximum On-State Characteristics R ӨJC Thermal Resistance Junction to Case R ӨJA Thermal Resistance, Junction to Ambient Total Power Dissipation 20 at Tc=25- Notes For information concerning connection diagram and package outline, refer to Section 7. Rating IRF711/713 MTP2N35 350 350 ±20 -55 to +150 IRF712-713 5.0 1.4 0.9...