Datasheet Summary
HEXFET ® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175- Operating Temperature Fast Switching Fully Avalanche Rated
VDSS=55V RDS(on)=0.07Ω ID=17A
Description Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to...
