Datasheet Details
| Part number | IRFZ24N |
|---|---|
| Manufacturer | ART CHIP |
| File Size | 587.95 KB |
| Description | Power MOSFET |
| Datasheet | IRFZ24N-ARTCHIP.pdf |
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Overview: IRFZ24N HEXFET ® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated VDSS=55V RDS(on)=0.
| Part number | IRFZ24N |
|---|---|
| Manufacturer | ART CHIP |
| File Size | 587.95 KB |
| Description | Power MOSFET |
| Datasheet | IRFZ24N-ARTCHIP.pdf |
|
|
|
Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFZ24N | N-channel enhancement mode TrenchMOS transistor | NXP |
 |
IRFZ24N | Power MOSFET | International Rectifier |
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IRFZ24N | N-Channel MOSFET Transistor | Inchange Semiconductor |
|
IRFZ24NL | Power MOSFET | International Rectifier |
 |
IRFZ24NL | Power MOSFET | TRANSYS |
| Part Number | Description |
|---|---|
| IRFZ20 | 0.1 Ohm HEXFET |
| IRFZ22 | 0.1 Ohm HEXFET |
| IRFZ34N | Power MOSFET |
| IRFZ40 | N-CHANNEL POWER MOSFETS |
| IRFZ42 | N-CHANNEL POWER MOSFETS |
| IRFZ44 | N-CHANNEL POWER MOSFETS |
| IRFZ45 | N-CHANNEL POWER MOSFETS |
| IRFZ46 | HEXFET Power MOSFET |
| IRF340 | N-Channel Power MOSFETs |
| IRF341 | N-Channel Power MOSFETs |