DESCRIPTION
Fifth Generation HEXFET ® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS
Parameter Max. ID@ Tc=25¥ ID@ Tc=100¥ IDM PD@ TC=25¥ Continuous Drain Current, VGS @ 10V 17 Continuous Drain Current, VGS @ 10V 12 Pulsed Drain Current æ 68 Power Dissipation 45 Linear Derating Factor 0.30 VGS EAS IAR EAR dv/dt Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy ç 71 Avalanche Current æ 10 Repetitive Avalanche Energy æ 4.5 Peak Diode Recovery dv/dt è 5.0 TJ Operating Junction and -55 to +175 ISTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 Ibf●in (1.1N●m) Units A W W/¥ V mJ A mJ V/ns ¥ Thermal Resistance Parameter RӨJC Junction-to-Case RӨCS Case-to-Sink, Flat, Greased Surface RӨJC Junction-to-Ambient Min. - Typ.
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