ART CHIP IRFZ45
N-CHANNEL POWER MOSFETS
| Part No. | IRFZ45 |
|---|---|
| Datasheet | IRFZ45 Download |
| Manufacturer |  ART CHIP |
| Description | N-CHANNEL POWER MOSFETS |
| Buy | Stock & Price |
FEATURES
Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220 IRFZ44/IRFZ45 IRFZ40/IRFZ42 PRODUCT SUMMARY Part Number VDS IRFZ44 60V RDS(on) 0.028Ω ID 35A IRFZ45 60V 0.035Ω 35A IRFZ40 50V 0.028Ω 35A IRFZ42 50V 0.035Ω 35A *Current limited by wire & pin diameterMAXIMUM RATINGS
Characteristic Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1 0MΩ) (1) Gate-Source Voltage Continuous Drain Current Tc=25¥ Continuous Drain Current Tc=100¥ Drain Current – Pulsed (3) Gate Current –Pulsed Single Pulsed Avalanche Energy (4) Avalanche Current Total Power Dissipation at Tc=25¥ Operating and Storage Junction Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5 seconds Notes: (1) TJ=25¥ to 175¥ Symbol VDSS VDGR VGS ID ID IDM IGM EAS IAS PD TJ,Tstg TL IRFZ44 IRFZ45 60 60 ±20 35 35 35 33 210 190 ±15 53 35 150 12 -55 to 175¥ 300 (2) Pulse test.
