Datasheet Summary
HEXFET ® Power MOSFET
Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
VDSS=50V RDS(on)=0.024Ω
ID=50
- A
Description Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the...
