DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ABSOLUTE MAXIMUM RATINGS
Parameter ID@ Tc=25 ID@ Tc=100 IDM PD @ Tc=25 VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS@10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw 300 (1.6mm from case) 10 Ibf●in (1.1 N●m) Max. 50* 38 220 150 1.0 ±20 100 4.5 -55 to -175 W W/ V mJ V/ns Units A Thermal Resistance Parameter RӨJC RӨCS RӨJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. Typ. 0.50 Max. 1.0 62 Units /W 1 IRFZ46 HEXFET ® Power MOSFET ELECTRICAL CHARACTERISTICS
@ TJ=25 Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
ART CHIP
