1N831
1N831 is SILICON MIXER DIODE manufactured by ASI.
DESCRIPTION
:
The ASI 1N831 is a Silicon Mixer
Diode Designed for Applications Operating From 2.0 to 4.0 GHz.
FEATURES
:
- High burnout resistance
- Low noise figure
- Hermetically sealed package
MAXIMUM RATINGS
IF 20 m A
VR 1.0 V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ -55 °C to +150 °C
TSTG
-55 °C to +150 °C
PACKAGE STYLE DO- 7
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
NF f = 3060 MHz PLO = 1.0 m W
NFif = 1.5 d B
RL = 100 Ω
IF = 30 MHz
NR f = 3060 MHz PLO = 1.0 m W
NFif = 1.5 d B
RL = 100 Ω
IF = 30 MHz
LC f = 3060 MHz PLO = 0.5 m W
Z IF
RL = 22 Ω f = 1000 Hz frange
MINIMUM TYPICAL
300 2.0
MAXIM 8.3
5.5 500 4.0
UNITS d B
--- d B Ω...
