2N6093
2N6093 is NPN SILICON RF POWER TRANSISTOR manufactured by ASI.
DESCRIPTION
:
The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode.
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC
10 A 35 V 83.3 W @ TC = 75 C -65 C to +200 C -65 C to +200 C 1.50 C/W
¼-28 UNF Thread
1 = Emitter & Diode Cathode 2 = Collector 3 = Base 4 = Diode Anode
NONE
CHARACTERISTICS
SYMBOL
BVCEO BVCES ICES BVEBO h FE VF hfe COB PIE GPE ηC IMD
TC = 25 C
TEST CONDITIONS
IC = 200 m A IC = 200 m A VCE = 60 V IE = 20 m A VCE = 6.0 V IF = 10 m A VCE = 28 V VCB = 30 V VCC = 28 V f = 30 MHz VCC = 28 V IC = 20 m A POE = 75.0 W IC = 20 m A IC = 1.0 A f = 50 MHz f = 1.0 MHz POE = 37.5 W IC = 5.0 A TC = 55 C
MINIMUM
35 70
TYPICAL
MAXIMUM
UNITS
30 3.5 20 0.8 2.0 250 1.88 3.75 13 40 -30 m A V --V --p F W d B % d B
POE = 75.0 W f = 30 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1202
- FAX (818) 765-3004
Specifications are subject to change without notice.
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