The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode.
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2N6093
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-217 DESCRIPTION:
The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode.
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC
O O
10 A 35 V 83.3 W @ TC = 75 C -65 C to +200 C -65 C to +200 C 1.50 C/W
O O O O
¼-28 UNF Thread
1 = Emitter & Diode Cathode 2 = Collector 3 = Base 4 = Diode Anode
NONE
CHARACTERISTICS
SYMBOL
BVCEO BVCES ICES BVEBO hFE VF hfe COB PIE GPE ηC IMD
TC = 25 C
O
TEST CONDITIONS
IC = 200 mA IC = 200 mA VCE = 60 V IE = 20 mA VCE = 6.0 V IF = 10 mA VCE = 28 V VCB = 30 V VCC = 28 V f = 30 MHz VCC = 28 V IC = 20 mA POE = 75.0 W IC = 20 mA IC = 1.0 A f = 50 MHz f = 1.0 MHz POE = 37.
2N6093 Datasheet
