ASI AP3000A-00
The AP3000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device is Designed to Cover a Wide Range of Control Applications Such as RF Switching,Phase Shifting, Modulation, Duplexing Limiting and Pulse Forming.DESCRIPTION
: PACKAGE STYLE 01MAXIMUM RATINGS
IF VR PDISS θJC 100 mA 300 V 250 mW @ TA = 25 C 20 C/W O O NONE CHARACTERISTICS SYMBOL VBR CJ RS TL Trr IR = 10 µA VR = 50 V VR = 40 V IF = 50 mA IF =10 mA IF =20 mA TC = 25 C O TEST CONDITIONS f = 1.0 MHz MINIMUM 300 TYPICAL MAXIMUM 0.2 0.6 UNITS V pF Ohms nS nS f = 100 MHz IR = 6.0 mA IR = 100 mA 1000 100 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1202
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1