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BM100-28 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI BM100-28 is Designed for high power VHF Applications up to 200 MHz.

Key Features

  • Common Emitter.
  • PG = 8.5 dB at 20 W/175 MHz.
  • Omnigold™ Metalization System.

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Datasheet Details

Part number BM100-28
Manufacturer ASI
File Size 48.05 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet BM100-28 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BM100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BM100-28 is Designed for high power VHF Applications up to 200 MHz. FEATURES: • Common Emitter • PG = 8.5 dB at 20 W/175 MHz • Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θJC O O 20 A 33 V 65 V 4.0 V 270 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.65 C/W O O O O 1 = COLLECTOR 2 = BASE 3&4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE CCB PG ηC IC = 50 mA TC = 25 C O NONETEST CONDITIONS IC = 100 mA IE = 5.0 mA VCE = 5.0 V VVB = 28 V VCC = 28 V POUT = 100 W IC = 1.0 A f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 33 65 4.0 10 200 8.5 60 UNITS V V V --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.