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2SC1251
NPN SILICON RF POWER TRANSISTOR
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DESCRIPTION:
The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz.
FEATURES INCLUDE:
• Direct Replacement for NE74020 • High Gain - 10 dB min. @ 1.0 GHz • Gold Metalization
PACKAGE STYLE .204 4L STUD
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC
O O
300 mA 45 V 5.3W @ TC = 25 C -65 C to +200 C -65 C to +150 C 33 C/W
O O O O
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO hFE COB PG P1dB
TC = 25 C
O
TEST CONDITIONS
IC = 10 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 15 V VCE = 15 V IC = 100 mA IC = 100 mA f = 1.0 MHz POUT = 0.5 W f = 1000 MHz
MINIMUM TYPICAL MAXIMUM
25 45 3.0 20 200 3.
C1251 Datasheet
