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C2904 - 2SC2904

General Description

epitaxial plana type transistor designed for high power amplifiers in HF band.

Key Features

  • Internal Input Matching Network.
  • PG = 11.5 dB at 1000 W/30 MHz.
  • Omnigold™ Metalization System.

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Datasheet Details

Part number C2904
Manufacturer ASI
File Size 41.19 KB
Description 2SC2904
Datasheet download datasheet C2904 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC2904 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2904 is a silicon epitaxial plana type transistor designed for high power amplifiers in HF band. FEATURES: • Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 22 A VCBO 50 V VCEO 20 V VEBO 4.0 V PDISS 200 W @ TC = 25 °C TJ -55 °C to +175 °C TSTG -55 °C to +175 °C θJC 0.75 °C/W PACKAGE STYLE .500 6L FLG CA 2x ØN FULL R D DIM A B C D E F G H I J K L M N BE .725/18,42 GF H M IN IM U M inches / mm .150 / 3.43 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .970 / 24.64 .090 / 2.29 .150 / 3.81 JI .045 / 1.14 .125 / 3.18 .725 / 18.42 .120 / 3.05 M K L M A X IM U M inches / mm .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .