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2SC2904
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2904 is a silicon
epitaxial plana type transistor designed for high power amplifiers in HF band.
FEATURES:
• Internal Input Matching Network • PG = 11.5 dB at 1000 W/30 MHz • Omnigold™ Metalization System
MAXIMUM RATINGS
IC 22 A
VCBO
50 V
VCEO
20 V
VEBO
4.0 V
PDISS
200 W @ TC = 25 °C
TJ -55 °C to +175 °C
TSTG
-55 °C to +175 °C
θJC 0.75 °C/W
PACKAGE STYLE .500 6L FLG
CA
2x ØN FULL R
D
DIM
A B C D E F G H I J K L M N
BE .725/18,42
GF
H
M IN IM U M inches / mm .150 / 3.43
.210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08
.970 / 24.64 .090 / 2.29 .150 / 3.81
JI .045 / 1.14
.125 / 3.18 .725 / 18.42
.120 / 3.05
M K
L
M A X IM U M inches / mm .160 / 4.06
.220 / 5.59 .865 / 21.97 .210 / 5.33 .