HFT150-28
HFT150-28 is NPN SILICON RF POWER TRANSISTOR manufactured by ASI.
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HFT150-28 is Designed for
.112x45° A L
PACKAGE STYLE .500 4L FLG
Features
:
- PG = 16 d B min. at 150 W/30 MHz
- IMD3 = -28 d Bc max. at 150 W (PEP)
- Omnigold™ Metalization System
FULL R
Ø.125 NOM.
MAXIMUM RATINGS
ID V(BR)DSS VGS PDISS TJ T STG θ JC
DIM A B C D E F
MINIMUM inches / mm
MAXIMUM inches / mm
16 A 65 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.60 OC/W
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67
G H I J K L
ORDER CODE: ASI10616
CHARACTERISTICS
SYMBOL
V(BR)DSS IDSS IGSS VGS VDS GFS CISS COSS CRSS PIN GPS η VGS = 0 V VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V
TC = 25 OC
NONETEST CONDITIONS
IDS = 100 m A VDS = 28 V VDS = 0 V ID = 100 m A ID = 10 A ID = 5 A
MINIMUM TYPICAL...
