Datasheet Details
| Part number | HVV1011-035 |
|---|---|
| Manufacturer | ASI |
| File Size | 171.27 KB |
| Description | RF transistor |
| Datasheet |
 HVV1011-035 Datasheet
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General Description
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz.
Key Features
- High Power Gain Excellent Ruggedness 50V Supply Voltage.