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HVV1214-025 - RF transistor

Description

The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz.

Features

  • High Power Gain Excellent Ruggedness 50V Supply Voltage.

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Datasheet Details

Part number HVV1214-025
Manufacturer ASI
File Size 181.22 KB
Description RF transistor
Datasheet download datasheet HVV1214-025 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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>LL'('*#&(+ 25 Watts, 50V, 1200-1400MHz 200!s, 10% Duty DESCRIPTION The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications operating over the frequency range of 1200 MHz and 1400 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 95 -10, 10 2 116 -65 to +150 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol Parameter 1 JC Thermal Resistance Max 1.5 Unit °C/W PACKAGE The device resides in the SM200 surface mount package with a ceramic lid.
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