MRA1417-6H
MRA1417-6H is NPN SILICON RF POWER TRANSISTOR manufactured by ASI.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRA1417-6H is a mon Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links.
Features
INCLUDE:
- Gold Metallization
- Emitter Ballasting
- Input Matching
MAXIMUM RATINGS
IC 1.0 A
VCBO PDISS
TJ TSTG θJC
50 V 19 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC
9.0 OC/W
PACKAGE STYLE .250 2L FLG (B)
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCBO BVCES BVEBO
IC = 25 mA IC = 25 mA IE = 3.0 mA hFE VCE = 5.0 V IC = 100 mA
MINIMUM TYPICAL MAXIMUM
50 55 3.5
20 100
Cob VCB = 28 V f = 1.0 MHz
PG ηC
VCE = 28 V POUT = 6.0 W f = 1400
- 1700...
