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MRA1417-6H
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links.
FEATURES INCLUDE:
• Gold Metallization • Emitter Ballasting • Input Matching
MAXIMUM RATINGS
IC 1.0 A
VCBO PDISS
TJ TSTG θJC
50 V 19 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC
9.0 OC/W
PACKAGE STYLE .250 2L FLG (B)
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCBO BVCES BVEBO
IC = 25 mA IC = 25 mA IE = 3.0 mA
hFE VCE = 5.0 V IC = 100 mA
MINIMUM TYPICAL MAXIMUM
50 55 3.5
20 100
Cob VCB = 28 V
f = 1.0 MHz
6.5
PG ηC
VCE = 28 V POUT = 6.0 W f = 1400 - 1700 MHz
7.2
7.5 40
UNITS
V V V ---
pF
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
MRA1417-6H Datasheet
