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MRAL1720-9
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRAL1720-9 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications up to 2.0 GHz.
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PACKAGE STYLE 400 4L FLG
FEATURES:
• Diffused Ballast Resistors. • Internal Matching Network • Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCES VEBO TJ TSTG θJC 4.0 A (CONT) 42 V 3.5 V -65 °C to +200 °C -65 °C to +150 °C 4.5 °C/W
CHARACTERISTICS
SYMBOL
BVCES BVEBO ICBO hFE Cob GPB ηc IC = 80 mA IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 28 V VCE = 22 V
TC = 25 °C
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
42 3.5 2.0 V V mA --pF dB % 100 12 6.5 40
IC = 400 mA f = 1.0 MHz Pout = 9.0 W f = 1.7 GHz & 2.0 GHz
10
A D V A N C E D S E M I C O N D U C T O R, I N C.
MRAL1720-9 Datasheet
