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MRAL2023-3
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRAL2023-3 is a Common Base Device Designed for class C Amplifier Applications in L-Band FM Microwave Links.
PACKAGE STYLE .250 2L FLG (C)
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FEATURES INCLUDE:
• Gold Metallization • Emitter Ballasting • Input Matching
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC
O O
0.5 A 40 V 10 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 16 C/W
O O O O
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS
SYMBOL
BVCES BVEBO ICBO hFE COB PG ηC IC = 20 mA
TC = 25 C
O
TEST CONDITIONS
IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V VCE = 22 V POUT = 3.0 W IC = 200 mA f = 1.0 MHz f = 2000 to 2300 MHz
MINIMUM TYPICAL MAXIMUM
40 3.5 1.0 10 5 8.0 8.5 45
UNITS
V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
MRAL2023-3 Datasheet
