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MS2601
NPN RF POWER TRANSISTOR
DESCRIPTION:
The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz.
PACKAGE STYLE 400 x 400 2NL FLG
1
2 3
4
FEATURES INCLUDE:
• Input/Output Matching • Gold Metallization • Emitter Ballasting
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θJC 0.45 A 34 V 11.5 W @ TC = 25 °C -65 °C to+200 °C -65 °C to+200 °C 13.0 °C/W
1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER
CHARACTERISTICS
SYMBOL
BVCBO BVCER BVEBO ICES hFE POUT PG ηC
TC = 25 °C
TEST CONDITIONS
IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCE = 30 V VCE = 5 V IC = 100 mA f = 2700 to 3100 MHz Duty Cycle = 10%
MINIMUM
45 45 3.5
TYPICAL MAXIMUM
UNITS
V V V
0.5 10 1.0 5.2 27 150
mA --W dB %
VCC = 30 V PIN = 0.
MS2601 Datasheet
