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NE56787
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
The ASI NE56787 is Designed for general purpose and ultra linear small signal amplifier applications up to 4.0 GHz.
PACKAGE STYLE .100 2L
FEATURES INCLUDE:
• Ideal for linear Class-A amplifiers
MAXIMUM RATINGS:
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 2.0 V 600 mW @ TA ≤ 75 °C -65 °C to +200 °C -65 °C to +200 °C 40 °C/W
CHARACTERISTICS
SYMBOL
ICBO IEBO hFE COB fs VCB = 10 V
TC = 25 °C
TEST CONDITIONS
VEB = 1.0 V VCE = 10 V VCB = 10 V S21 = 0 dB
2
MINIMUM TYPICAL MAXIMUM
1.0 1.0
UNITS
µA µA --pF GHz
IC = 30 mA f = 1.0 MHz
30
100 0.44
200 0.80
7.5
8.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
NE56787 Datasheet
