TPV5051
TPV5051 is NPN SILICON RF POWER TRANSISTOR manufactured by ASI.
DESCRIPTION
:
The TPV5051 is Designed for AB Push Pull, mon Emitter from 470 to 860 MHz Applications.
PACKAGE STYLE BMA-2
MILLIMETER S MIN MAX 20.07 20.57 6.35 6.85 4.20 5.02 1.40 1.65 1.40 1.65 1.27 1.77 1.34 2.43 0.08 0.12 4.83 5.33 6.56 6.80 3.18 3.42 14.03 14.52 INCHES MIN 0.790 0.250 0.165 0.055 0.055 0.060 0.076 0.003 0.190 0.258 0.125 0.552 MAX 0.810 0.270 0.198 0.065 0.065 0.070 0.096 0.005 0.210 0.268 0.135 0.572
FEATURES
:
- Gold Metalization
- Diffused Ballast Resistor
DIM A B C D E G H J K N Q U 1 = BASE 2 = BASE 4 = COLLECTOR 3 = COLLECTOR 5 = EMITTER
MAXIMUM RATINGS
IC VCEO VCBO PDISS TJ TSTG θJC 9.0 A 30 V 45 V 97 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.8 °C/W
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO BVCER ICEO h FE Cob PG ηC IC = 60 m A IC = 20 m A IE = 6.0 m A IC = 10 m A VCE = 28 V VCE = 20 V VCB = 28 V VCE = 28 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
30 45 4.0 V V V V 10 m A --40 6.5 45 p F d B %
RBE = 50 Ω IC = 800 m A f = 1.0 MHz (EACH SIDE) Pout = 50 W Iq = 2X50 m A f = 860 MHz
40 10
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
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