TPV5051 Datasheet PDF

DESCRIPTION

: PACKAGE STYLE BMA-2 MILLIMETER S MIN MAX 20.07 20.57 6.35 6.85 4.20 5.02 1.40 1.65 1.40 1.65 1.27 1.77 1.34 2.43 0.08 0.12 4.83 5.33 6.56 6.80 3.18 3.42 14.03 14.52 INCHES MIN 0.790 0.250 0.165 0.055 0.055 0.060 0.076 0.003 0.190 0.258 0.125 0.552 MAX 0.810 0.270 0.198 0.065 0.065 0.070 0.096 0.005 0.210 0.268 0.135 0.572

FEATURES

:
● Gold Metalization
● Diffused Ballast Resistor DIM A B C D E G H J K N Q U 1 = BASE 2 = BASE 4 = COLLECTOR 3 = COLLECTOR 5 = EMITTER

MAXIMUM RATINGS

IC VCEO VCBO PDISS TJ TSTG θJC 9.0 A 30 V 45 V 97 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.8 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO BVCER ICEO hFE Cob PG ηC IC = 60 mA IC = 20 mA IE = 6.0 mA IC = 10 mA VCE = 28 V VCE = 20 V VCB = 28 V VCE = 28 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 30 45 4.0 V V V V 10 mA --40 6.5 45 pF dB % RBE = 50 Ω IC = 800 mA f = 1.0 MHz (EACH SIDE) Pout = 50 W Iq = 2X50 mA f = 860 MHz 40 10 A D V A N C E D S E M I C O N D U C T O R, I N C.