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TPV5051 - NPN SILICON RF POWER TRANSISTOR

General Description

The TPV5051 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications.

Key Features

  • Gold Metalization.
  • Diffused Ballast Resistor DIM A B C D E G H J K N Q U 1 = BASE 2 = BASE 4 =.

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Datasheet Details

Part number TPV5051
Manufacturer ASI
File Size 53.08 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TPV5051 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TPV5051 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV5051 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. PACKAGE STYLE BMA-2 MILLIMETER S MIN MAX 20.07 20.57 6.35 6.85 4.20 5.02 1.40 1.65 1.40 1.65 1.27 1.77 1.34 2.43 0.08 0.12 4.83 5.33 6.56 6.80 3.18 3.42 14.03 14.52 INCHES MIN 0.790 0.250 0.165 0.055 0.055 0.060 0.076 0.003 0.190 0.258 0.125 0.552 MAX 0.810 0.270 0.198 0.065 0.065 0.070 0.096 0.005 0.210 0.268 0.135 0.572 FEATURES: • Gold Metalization • Diffused Ballast Resistor DIM A B C D E G H J K N Q U 1 = BASE 2 = BASE 4 = COLLECTOR 3 = COLLECTOR 5 = EMITTER MAXIMUM RATINGS IC VCEO VCBO PDISS TJ TSTG θJC 9.0 A 30 V 45 V 97 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.