ASC30N650MT4 Datasheet | AST

Description Silicon Carbide (Si C) MOSFET use a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. Features - High Speed Switching with Low Capacitances - High Blocking Voltage with Low RDS(on) - Optimized package with separate driver source pin - Easy to parallel and simple to drive - ROHS pliant, Halogen free Application - EV Charging - DC/DC Converters - Switch Mode Power Supplies - Power Factor Correction Modules - Solar PV inverters Ordering Information Part Number ASC30N650MT4 Marking ASC30N650MT4 Package TO-247 Packaging Tube Absolute Maximum Ratings(Tc=25℃) Symbol Parameter Drain-Source Voltage Drain Current(continuous)at Tc=25℃ Drain Current(continuous)at Tc=100℃ Drain Current (pulsed) Gate-Source Voltage Power Dissipation TC = 25°C TJ, Tstg Junction and Storage Temperature Range Value 650 36 26 100 -10/+22 150 -55 to +150 Unit V A A A V W...