AST ASC30N650MT4
The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 Drain Source Current，IDS Electrical Characteristics Fig1.| Part No. | ASC30N650MT4 |
|---|---|
| Datasheet | ASC30N650MT4 Download |
| Manufacturer | AST |
| Description | 650V N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.FEATURES
● High Speed Switching with Low Capacitances● High Blocking Voltage with Low RDS(on)
● Optimized package with separate driver source pin
● Easy to parallel and simple to drive
● ROHS Compliant, Halogen free Application
● EV Charging
● DC/DC Converters
● Switch Mode Power Supplies
● Power Factor Correction Modules
● Solar PV inverters Ordering Information Part Number ASC30N650MT4 Marking ASC30N650MT4 Package TO-247 Packaging Tube 1 ASC30N650MT4
ABSOLUTE MAXIMUM RATINGS
(Tc=25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ ID Drain Current(conti...
