AST ASC600N1200MED
1200V SiC MOSFET
FEATURES
● High Temperature, Humidity, and Bias Operation● Ultra Low Loss
● High-Frequency Operation
● Zero Turn-off Tail Current from MOSFET
● Normally-off, Fail-safe Device Operation
● Ease of Paralleling
● Integrated NTC temperature sensor
● Cu Baseplate and Aluminum Nitride Insulator Potential Applitions
● High power converters
● Motor drives
● Servo drives
● UPS systems
● Wind turbines Package 152mm x 62.5mm x 20.5mm Part Number Package Marking ASC600N1200MED Econodual ASC600N1200MED
ABSOLUTE MAXIMUM RATINGS
(TC = 25℃ Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage(dynamic) ID Drain Current IDM Drain Current (pulsed) PD Power Dissipation TC = 25°C TC,Tstg Operating and Storage Temperature Range TJ Junction Temperature LStray Stray Inductance unless otherwise specified) Value 1200 -10/+25 600 1200 960 -40 to +150 175 20 Unit V V A A W ℃ ℃ nH 1 ASC600N1200MEDELECTRICAL CHARACTERISTICS
(TC = 25℃ unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.