Datasheet Details
| Part number | ASC60N1200MT3 |
|---|---|
| Manufacturer | AST |
| File Size | 777.88 KB |
| Description | 1200V N-Channel MOSFET |
| Datasheet |
 ASC60N1200MT3 Datasheet
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General Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Key Features
- High Speed Switching with Low Capacitances.
- High Blocking Voltage with Low RDS(on).
- Simple to drive with Standard Gate Drive.
- 100% avalanche tested.
- Maximum junction temperature of 150°C.
- ROHS Compliant.