Datasheet Details
| Part number | ASC60N650MT3 |
|---|---|
| Manufacturer | AST |
| File Size | 801.85 KB |
| Description | 650V N-Channel MOSFET |
| Datasheet |
 ASC60N650MT3 Datasheet
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General Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.
Key Features
- High Speed Switching with Low Capacitances.
- High Blocking Voltage with Low RDS(on).
- Simple to drive with Standard Gate Drive.
- 100% avalanche tested.
- Maximum junction temperature of 150°C.
- ROHS Compliant.