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ASR50N1200D88 - 1200V N-Channel MOSFET

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Features

  • High Speed Switching with Low Capacitances.
  • High Blocking Voltage with Low RDS(on).
  • Simple to drive with Standard Gate Drive.
  • 100% avalanche tested.
  • Maximum junction temperature of 150°C.
  • ROHS Compliant.

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Datasheet Details

Part number ASR50N1200D88
Manufacturer AST
File Size 575.80 KB
Description 1200V N-Channel MOSFET
Datasheet download datasheet ASR50N1200D88 Datasheet

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Full PDF Text Transcription (Reference)

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ASR50N1200D88 1200V N-Channel MOSFET Description Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
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