ASTSIC ASC400N1200MD3
1200V SiC MOSFET Module
| Part No. | ASC400N1200MD3 |
|---|---|
| Datasheet | ASC400N1200MD3 Download |
| Manufacturer | ASTSIC |
| Description | 1200V SiC MOSFET Module |
| Buy | Stock & Price |
FEATURES
● High Temperature, Humidity, and Bias Operation● Ultra Low Loss
● High-Frequency Operation
● Zero Turn-off Tail Current from MOSFET
● Normally-off, Fail-safe Device Operation
● Ease of Paralleling
● AlSiC Baseplate and Aluminum Nitride Insulator System Benefits
● Enables Compact, Lightweight, Efficient Systems
● Harsh Outdoor Environment Installation
● Mitigates Over-voltage Protection
● Reduced Thermal Requirements
● Reduced System Cost Package 151mm x 103mm x 35.2mm Part Number Package Marking ASC400N1200MD3 DWC3 ASC400N1200MD3
ABSOLUTE MAXIMUM RATINGS
(TC = 25℃ Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage(dynamic) ID Drain Current IDM Drain Current (pulsed) PD Power Dissipation TC = 25°C TC,Tstg Operating and Storage Temperature Range TJ Junction Temperature LStray Stray Inductance unless otherwise specified) Value 1200 -10/+25 400 800 1154 -40 to +150 175 20 Unit V V A A W ℃ ℃ nH 1 ASC400N1200MD3ELECTRICAL CHARACTERISTICS
(TC = 25℃ unless otherwise specified) Symbol Parameter Test Conditions Min.
