ATC Semiconductor AT03400R
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.| Part No. | AT03400R |
|---|---|
| Datasheet | AT03400R Download |
| Manufacturer |  ATC Semiconductor |
| Description | 30V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Product Summary● Advanced high cell density Trench technology
● Super Low Gate Charge
● Excellent CdV/dt effect decline
● 100% EAS Guaranteed
● Green Device Available VDS ID RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
APPLICATIONS
● High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA● Networking DC-DC Power System
● Load Switch 30 V 40 A 5.5 mΩ 9 mΩ DFN3X3-8L Top View Top View S1 S2 S3 G4 8D 7D 6D 5D D G S
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Thermal Characteristi...
