ATC Semiconductor AT06255AP
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. The test condition is VDD=50V,RG=25 ,L=0.3mH 4.The power dissipation is limited by 150℃ junction temperature ATC Semiconductor Corp 2 v2.0 Typical Characteristics 500 T C = 25 o C 400 300 10V 9.0V 8.0V 7.0V V G =6.0V ID , Drain Current (A) 200 100 0 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) Fig 1.| Part No. | AT06255AP |
|---|---|
| Datasheet | AT06255AP Download |
| Manufacturer |  ATC Semiconductor |
| Description | 60V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Product Summary● Advanced Shield Gate Trench technology
● Super Low Gate Charge
● High-Speed Switching
● 100% EAS Guaranteed
● Green Device Available
APPLICATIONS
● High Frequency Point-of-Load,Synchronous Buck Converter● Networking DC-DC Power System
● Load Switch VDS ID RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60 V 255 A 1.6 mΩ 2.3 mΩ D G DS TO-220 Top View G S
ABSOLUTE MAXIMUM RATINGS
(TC=25℃, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current1 Continuous Drain Current1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range TC=100℃ Symbol VDS VGS ID ID IDM EAS PD TSTG TJ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient1 Thermal Resistance Junction-Case1 Symbol RθJA RθJC Rating 60 ±20 255 176 480 420 227 -55 to 150 -55 to 150 Units V V A A A mJ W ℃ ℃ Typ Max Unit --- 62 ℃/W --- 0.55 ℃/W ATC Semiconductor Corp 1 v2.0 AT...
