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AT06700L - 60V N-Channel MOSFET

Key Features

  • Product Summary.
  • Advanced high cell density Trench technology.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • ESD：HBM ≥ 200V,＜400V CDM＞250V,＜500V VDS ID RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60 V 70 A 8.5 mΩ 12 mΩ.

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Datasheet Details

Part number AT06700L
Manufacturer ATC Semiconductor
File Size 1.54 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet AT06700L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.atcsemi.com AT06700L 60V N-Channel MOSFET Features Product Summary ● Advanced high cell density Trench technology ● Super Low Gate Charge ● Excellent CdV/dt effect decline ● 100% EAS Guaranteed ● Green Device Available ● ESD：HBM ≥ 200V,＜400V CDM＞250V,＜500V VDS ID RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 60 V 70 A 8.