ATC Semiconductor AT11030U
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.| Part No. | AT11030U |
|---|---|
| Datasheet | AT11030U Download |
| Manufacturer |  ATC Semiconductor |
| Description | 110V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced high cell density Trench technology● Super Low Gate Charge
● Excellent CdV/dt effect decline
● Green Device Available AT11030U 110V N-Channel MOSFET Product Summary VDS ID RDS(ON) (at VGS=10V) 110 V 3 A 230 mΩ
APPLICATIONS
● High Frequency Point-of-Load,Synchronous Buck Converter● Networking DC-DC Power System
● Load Switch D D S D D G G SOT23-6L Top View
ABSOLUTE MAXIMUM RATINGS
(TA=25℃, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS ID IDM PD TSTG TJ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient1 Symbol RθJA D S Rating 110 ±20 3 10 1.25 -55 to 150 -55 to 150 Units V V A A W ℃ ℃ Typ Max Unit --- 62.5 ℃/W ATC Semiconductor Corp 1 v2.0 AT11030U 110V N-Channel MOSFETELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Sy...
