Click to expand full text
Features
• •
• • •
ConcurrentFlash™ Memory Unique Architecture Allows the Flash Array To Be Read During the E2PROM Write Cycle 4 Megabit 5-volt Flash Configured as a 512K x 8 Memory Array 120 ns Read Access Time Sector Program Operation Single Cycle Reprogram (No Erase Necessary) 2048 Sectors, 256-Bytes Wide 10 ms Sector Rewrite JEDEC Standard Software Data Protection 256K bit Full Feature E2PROM Configured as a 32K x 8 Memory Array Byte or Page (16 bytes) Write Capability Write Cycle Time: 10 ms JEDEC Standard Software Data Protection Pinout Similar to 32-Pin 4 Mb Flash Data Memory Endurance: 10,000 cycles
4 Megabit 5-volt Flash with 256K E2PROM Memory AT29C432 ConcurrentFlash™ Preliminary
Description
The AT29C432 is a CMOS memory specifically designed for applications requiring both