AT45DB011B Datasheet | Atmel

Features - - - - - - - - - - - - - - Single 2.7V - 3.6V Supply Serial Peripheral Interface (SPI) patible 20 MHz Max Clock Frequency Page Program Operation - Single Cycle Reprogram (Erase and Program) - 512 Pages (264 Bytes/Page) Main Memory Supports Page and Block Erase Operations One 264-byte SRAM Data Buffer Continuous Read Capability through Entire Array - Ideal for Code Shadowing Applications Fast Page Program Time - 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation - 4 m A Active Read Current Typical - 2 µA CMOS Standby Current Typical Hardware Data Protection Feature 100% patible with AT45DB011 mercial and Industrial Temperature Ranges Green (Pb/Halide-free/Ro HS pliant) Packaging Options 1-megabit 2.7-volt Only Data Flash® AT45DB011B Description The AT45DB011B is a 2.7-volt only, serial interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. Its 1,081,344 bits of memory are organized as 512 pages of 264 bytes each. In addition to the main memory, the AT45DB011B also contains one SRAM data buffer of 264 bytes. The buffer allows receiving of data while a page in the main memory is being .. reprogrammed. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step Read-Modify-Write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the Data Flash uses a SPI serial interface to sequentially access its data. SPI mode 0 and mode 3 are supported. The simple serial interface facilitates hardware Pin Configurations Pin Name CS SCK SI SO WP RESET RDY/BUSY Function Chip Select Serial Clock Serial Input CBGA Top View through Package 1 2 3 CS RDY/BSY WP SO SI RESET Serial Output Hardware Page Write Protect Pin Chip Reset Ready/Busy SOIC SI SCK RESET CS 1 2 3 4 8 7 6 5 SO GND VCC WP TSSOP Top View Type...