AT45DB021 Overview
Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 1024 Pages (264 Bytes/Page) Main Memory Two 264-Byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Non-Volatile Memory Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation – 4 mA...
AT45DB021 Key Features
- Single 2.7V
- 3.6V Supply
- Serial Interface Architecture
- Page Program Operation
- Single Cycle Reprogram (Erase and Program)
- 1024 Pages (264 Bytes/Page) Main Memory Two 264-Byte SRAM Data Buffers
- Allows Receiving of Data while Reprogramming of Non-Volatile Memory Internal Program and Control Timer Fast Page Program
- 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation
- 4 mA Active Read Current Typical
- 5 µA CMOS Standby Current Typical 5 MHz Max Clock Frequency Hardware Data Protection Feature Serial Peripheral Interface
