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AT45DB021 - 2-Megabit 2.7-volt Only Serial DataFlash

Download the AT45DB021 datasheet PDF. This datasheet also covers the AT4-5DB variant, as both devices belong to the same 2-megabit 2.7-volt only serial dataflash family and are provided as variant models within a single manufacturer datasheet.

General Description

The AT45DB021 is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming.

Its 2,162,688 bits of memory are organized as 1024 pages of 264-bytes each.

In addition to the main memory, the AT45DB021 also contains two SRAM data buffers of 264-bytes each.

Key Features

  • Single 2.7V - 3.6V Supply.
  • Serial Interface Architecture.
  • Page Program Operation.
  • Single Cycle Reprogram (Erase and Program).
  • 1024 Pages (264 Bytes/Page) Main Memory Two 264-Byte SRAM Data Buffers.
  • Allows Receiving of Data while Reprogramming of Non-Volatile Memory Internal Program and Control Timer Fast Page Program Time.
  • 7 ms Typica.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT4-5DB-021.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AT45DB021D 2-megabit 2.7V Minimum DataFlash Adesto
AT45DB021E SPI Serial Flash Memory Adesto
AT45DB011D 1-megabit 2.7-volt Minimum DataFlash Adesto
AT45DB041D 4-megabit 2.5-volt or 2.7-volt DataFlash Adesto
AT45DB041E 1.65V Minimum SPI Serial Flash Memory Adesto

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT45DB021A 2-megabit 2.7-volt Only Serial DataFlash
AT45DB021B 2-megabit 2.7-volt Only DataFlash
AT45DB021D 2-megabit 2.7-volt DataFlash
AT45DB011 1-Megabit 2.7-volt Only Serial DataFlash
AT45DB011B 1-megabit 2.7-volt Only DataFlash

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 1024 Pages (264 Bytes/Page) Main Memory Two 264-Byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Non-Volatile Memory Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation – 4 mA Active Read Current Typical – 5 µA CMOS Standby Current Typical 5 MHz Max Clock Frequency Hardware Data Protection Feature Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3 CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges 2-Megabit 2.