AT45DB021D Datasheet | Atmel

Features - Single 2.7V to 3.6V Supply - Rapid S® Serial Interface: 66 MHz Maximum Clock Frequency - SPI patible Modes 0 and 3 - User Configurable Page Size - 256 Bytes per Page - 264 Bytes per Page Page Program Operation - Intelligent Programming Operation - 1,024 Pages (256/264 Bytes/Page) Main Memory Flexible Erase Options - Page Erase (256 Bytes) - Block Erase (2 Kbytes) - Sector Erase (32 Kbytes) - Chip Erase (2 Mbits) One SRAM Data Buffer (256/264 Bytes) Continuous Read Capability through Entire Array - Ideal for Code Shadowing Applications Low-power Dissipation - 7 m A Active Read Current Typical - 25 µA Standby Current Typical - 5 µA Deep Power-down Typical Hardware and Software Data Protection Features - Individual Sector Sector Lockdown for Secure Code and Data Storage .. - Individual Sector Security: 128-byte Security Register - 64-byte User Programmable Space - Unique 64-byte Device Identifier JEDEC Standard Manufacturer and Device ID Read 100,000 Program/Erase Cycles Per Page Minimum Data Retention - 20 Years Industrial Temperature Range Green (Pb/Halide-free/Ro HS pliant) Packaging Options - - 2-megabit 2.7-volt Data Flash AT45DB021D Preliminary - - - - - - - - - - - 1. Description The AT45DB021D is a 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB021D supports Rapid S serial interface for applications requiring very high speed operations. Rapid S serial interface is SPI patible for frequencies up to 66 MHz. Its 2,162,688 bits of memory are organized as 1,024 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB021D also contains one SRAM buffer of 256/264 bytes. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the Data Flash ® uses a...