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AT45DB161 - 16-Megabit 2.7-volt Only Serial DataFlash

This page provides the datasheet information for the AT45DB161, a member of the AT4-5DB 16-Megabit 2.7-volt Only Serial DataFlash family.

Datasheet Summary

Description

The AT45DB161 is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming.

Its 17,301,504 bits of memory are organized as 4096 pages of 528 bytes each.

In addition to the main memory, the AT45DB161 also contains two SRAM data buffers of 528 bytes each.

Features

  • Single 2.7V - 3.6V Supply.
  • Serial Interface Architecture.
  • Page Program Operation.
  • Single Cycle Reprogram (Erase and Program).
  • 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations Two 528-Byte SRAM Data Buffers.
  • Allows Receiving of Data while Reprogramming of Nonvolatile Memory Internal Program and Control.

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Datasheet preview – AT45DB161

Datasheet Details

Part number AT45DB161
Manufacturer ATMEL Corporation
File Size 224.43 KB
Description 16-Megabit 2.7-volt Only Serial DataFlash
Datasheet download datasheet AT45DB161 Datasheet
Additional preview pages of the AT45DB161 datasheet.

📁 Similar Datasheet

  • AT45DB161B - 16-megabit 2.5-volt Only or 2.7-volt Only DataFlash (ATMEL)
  • AT45DB161D - 16-megabit 2.5V or 2.7V DataFlash (Adesto)
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Other Datasheets by ATMEL Corporation
  • AT45DB161D - 16-Megabit 2.7-volt Only Serial DataFlash
  • AT45DB161E - 2.3V or 2.5V Minimum SPI Serial Flash Memory
  • AT45DB1282 - 128-megabit 2.7-volt Dual-interface DataFlash
  • AT45DB011 - 1-Megabit 2.7-volt Only Serial DataFlash
  • AT45DB011B - 1-megabit 2.7-volt Only DataFlash
  • AT45DB011D - 1-megabit 2.7-volt DataFlash
  • AT45DB021 - 2-Megabit 2.7-volt Only Serial DataFlash
  • AT45DB021A - 2-megabit 2.7-volt Only Serial DataFlash

Full PDF Text Transcription

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Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations Two 528-Byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Nonvolatile Memory Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation – 4 mA Active Read Current Typical – 3 µA CMOS Standby Current Typical 13 MHz Max Clock Frequency Hardware Data Protection Feature Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3 CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges 16-Megabit 2.
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