AT45DB161 Overview
Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations Two 528-Byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Nonvolatile Memory Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer...
AT45DB161 Key Features
- Single 2.7V
- 3.6V Supply
- Serial Interface Architecture
- Page Program Operation
- Single Cycle Reprogram (Erase and Program)
- 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations Two 528-Byte SRAM Data Buffers
- Allows Receiving of Data while Reprogramming of Nonvolatile Memory Internal Program and Control Timer Fast Page Program
- 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation
- 4 mA Active Read Current Typical
- 3 µA CMOS Standby Current Typical 13 MHz Max Clock Frequency Hardware Data Protection Feature Serial Peripheral Interfac
