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AT45DB161 - 16-Megabit 2.7-volt Only Serial DataFlash

Download the AT45DB161 datasheet PDF. This datasheet also covers the AT4-5DB variant, as both devices belong to the same 16-megabit 2.7-volt only serial dataflash family and are provided as variant models within a single manufacturer datasheet.

General Description

The AT45DB161 is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming.

Its 17,301,504 bits of memory are organized as 4096 pages of 528 bytes each.

In addition to the main memory, the AT45DB161 also contains two SRAM data buffers of 528 bytes each.

Key Features

  • Single 2.7V - 3.6V Supply.
  • Serial Interface Architecture.
  • Page Program Operation.
  • Single Cycle Reprogram (Erase and Program).
  • 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations Two 528-Byte SRAM Data Buffers.
  • Allows Receiving of Data while Reprogramming of Nonvolatile Memory Internal Program and Control.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AT4-5DB-161.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AT45DB161B 16-megabit 2.5-volt Only or 2.7-volt Only DataFlash ATMEL
AT45DB161D 16-megabit 2.5V or 2.7V DataFlash Adesto
AT45DB161E 16-Mbit DataFlash / 2.3V or 2.5V Minimum SPI Serial Flash Memory Adesto
AT45DB011D 1-megabit 2.7-volt Minimum DataFlash Adesto
AT45DB021D 2-megabit 2.7V Minimum DataFlash Adesto

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT45DB161D 16-Megabit 2.7-volt Only Serial DataFlash
AT45DB161E 2.3V or 2.5V Minimum SPI Serial Flash Memory
AT45DB1282 128-megabit 2.7-volt Dual-interface DataFlash
AT45DB011 1-Megabit 2.7-volt Only Serial DataFlash
AT45DB011B 1-megabit 2.7-volt Only DataFlash

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations Two 528-Byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Nonvolatile Memory Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation – 4 mA Active Read Current Typical – 3 µA CMOS Standby Current Typical 13 MHz Max Clock Frequency Hardware Data Protection Feature Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3 CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges 16-Megabit 2.