AT49BV322DT Description
The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for erase operations.
AT49BV322DT Key Features
- Single Voltage Read/Write Operation: 2.65V to 3.6V
- Access Time
- Sector Erase Architecture
- Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
- Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time
- 10 µs Fast Sector Erase Time
- 100 ms Suspend/Resume Feature for Erase and Program
- Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
- Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word Low-power
- 10 mA Active