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AT49LV040 - 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Datasheet Summary

Description

The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range.

Features

  • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV).
  • Fast Read Access Time - 120 ns.
  • Internal Program Control and Timer.
  • 16K bytes Boot Block With Lockout.
  • Fast Chip Erase Cycle Time - 10 seconds.
  • Byte-by-Byte Programming - 30 µs/Byte Typical.
  • Hardware Data Protection.
  • DATA Polling For End Of Program Detection.
  • Low Power Dissipation.
  • 25 mA Active Current.
  • 50 µA CMOS Standby Cur.

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Datasheet preview – AT49LV040

Datasheet Details

Part number AT49LV040
Manufacturer ATMEL Corporation
File Size 209.97 KB
Description 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage Flash Memory
Datasheet download datasheet AT49LV040 Datasheet
Additional preview pages of the AT49LV040 datasheet.

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Full PDF Text Transcription

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Features • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Chip Erase Cycle Time - 10 seconds • Byte-by-Byte Programming - 30 µs/Byte Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current – 50 µA CMOS Standby Current • Typical 10,000 Write Cycles • Small Packaging – 8 x 8 mm CBGA – 8 x 14 mm V-TSOP Description The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each.
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