AT49LV1614AT Overview
The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations.
AT49LV1614AT Key Features
- Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
- Access Time
- Sector Erase Architecture
- Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
- Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time
- 20 µs Fast Sector Erase Time
- 300 ms Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word and Seven 3
- Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation
- 30 mA Active
- 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection VPP Pin for Accelerated Program/Erase Op