AT49SV12804 Datasheet | Atmel

Features - 1.65V - 1.95V Read/Write .. - High Performance - Random Access Time - 70 ns - Page Mode Read Time - 20 ns - Synchronous Burst Frequency - 66 MHz - Configurable Burst Operation Sector Erase Architecture - Sixteen 4K Word Sectors with Individual Write Lockout - Two Hundred Fifty-four 32K Word Main Sectors with Individual Write Lockout Typical Sector Erase Time: 32K Word Sectors - 500 ms; 4K Word Sectors - 100 ms Thirty-two Plane Organization, Permitting Concurrent Read in Any of the Thirty-one Planes not Being Programmed/Erased Suspend/Resume Feature for Erase and Program - Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector - Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation - 30 m A Active - 10 µA Standby VPP Pin for Write Protection and Accelerated Program/Erase Operations RESET Input for Device Initialization CBGA and TSOP Packages Seventeen 128-bit Protection Registers (2,176 Bits) mon Flash Interface (CFI) - - - - - - - - - - 128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory AT49SN12804 AT49SV12804 Description The AT49SN/SV12804 is a 1.8-volt 128-megabit Flash memory. The memory is divided into multiple sectors and planes for erase operations. The AT49SN/SV12804 is organized as 8,388,608 x 16 bits. The device can be read or reprogrammed off a single 1.8V power supply, making it ideally suited for In-System programming. The device can be configured to operate in the asynchronous/page read (default mode) or burst read mode (not available for the AT49SV12804). The burst read mode is used to achieve a faster data rate than is possible in the asynchronous/page read mode. If the AVD and the CLK signals are both tied to GND and the burst configuration register is configured to perform asynchronous reads, the device will behave like a standard asynchronous Flash memory. In the page mode, the AVD signal can be tied to GND or can be pulsed low to latch the page...