ATR3515 Description
Preliminary Process The 5-GHz power amplifier is designed in Atmel’s advanced Silicon-Germanium (SiGe) process and provides excellent linearity and noise performance as well as good power-added efficiency. Circuitry The PA consists of a two-stage amplifier with a P1db of 25.5 dBm. The output stage was realized using an open-collector structure.
ATR3515 Key Features
- Frequency Range 4.9 GHz to 5.9 GHz
- Supply-voltage 2.7 V to 3.6 V
- 3.5% EVM at 19 dBm Output Power at 54 Mbit/s OFDM
- 25.5 dBm P1dB
- On-chip Power Detector with 25 dBm Dynamic Range
- Power-down Mode and Biasing Control
- Low Profile Lead-free Plastic Package QFN16 (4 × 4 × 0.9 mm)